1. An example for insulator
a) a.copper
b) aluminium
c) c.plastic
d) none of these
Ans: c
2. An example for semiconductor
a) copper
b) aluminium
c) mica
d) germanium
Ans:d
3. Forbidden gap is
a) gap between conduction band and valance band
b) gap between covalant band and valance band
c) gap between conduction band and energy band
d) none of these
Ans:a
4. In conductor, Forbidden gap is
a) large
b) very large
c) small
d) overlapped
Ans:d
5. In insulator, Forbidden gap is
a) large
b) very large
c) small
d) overlapped
Ans:b
6. In semiconductor, Forbidden gap is
a) small
b) large
c) zero
d) none of these
Ans:a
7. A pure semiconductor is
a) carbon
b) extrinsic semiconductor
c) zero semiconductor
d) intrinsic semiconductor
Ans:d
8.After the valley point UJT acts as
a.transister
b.amplifier
c.contoller
d.forward PN Diode
Ans:d
9.UJT used in
a.pulse generator
b. electric circuit
c.either (a)&(b)
d.none of these
Ans:a
10.Diac is used as
a.triggering device
b. pulse generator
c. amplifier
d.contoller
Ans:a
11.Triac is
a.Two transister device
b.two diodes device
c.two diacs device
d.two SCR device
Ans:d
12.When Gate current is equal to zero,SCR acts as
a.Diode
b.transister
c.PNPN Diode
d.none of these
Ans:c
13..Triac has
a.one terminal
b.two terminal
c.three terminal
d.four terminal
Ans:c
14.Terminals of SCR
a.gate,emitter
b.gate,base.collector
c.anode,cathode,gate
d.none of these
Ans:c
15. A term ‘holding current’ used in
a.Diode
b.transister
c.PNPN Diode
d.SCR
Ans:d
16. A term ‘Zener breakdown voltage’ used in
a.Zener Diode
b.transister
c.PNPN Diode
d.SCR
Ans:a
17.A term ‘intrinsic standoff ratio’ used in
a.Diode
b.UJT
c.PNPN Diode
d.SCR
Ans:b
18. A term ‘latching current’ used in
a.Diode
b.transister
c.PNPN Diode
d.SCR
Ans:d
19.Which one is used as triggering device
a.Diode
b.UJT
c.PNPN Diode
d.none of these
Ans:b
20.SCR is used as
a.pulse generator
b. amplifier
c.contoller
d.none of these
Ans:c
21. Majority carriers of P type material
(a) Electrons
(b) Holes
(c) Protons
(d) None of these
Ans:b
22. Minority carriers of N type material
(a) Electrons
(b) Holes
(c) Protons
(d) None of these
Ans:b
23. Minority carriers of P type material
(a) Electrons
(b) Holes
(c) Protons
(d) None of these
Ans:a
24. Terminals of diode
a.gate,emitter
b.gate,base.collector
c.anode,cathode,
d.none of these
Ans:c
25. Terminals of transistor
a.gate,emitter
b.gate,base.collector
c.anode,cathode,gate
d.base,emitter,collector
Ans:d
26.At room temperature, extrinsic semiconductor is
a)conductor
b)poor conductor
c)partially conductor
d)none of these
Ans:b
27.Which one is trivalent impurity
a)boron
b)antimony
c)silicon
d)none of these
Ans:a
28.Which one is pentavalent impurity
a)boron
b)antimony
c)silicon
d)none of these
Ans:b
29.Resistance of an ideal diode, resistance during reverse biasing
(a) Zero
(b) Unity
(c) Maximum
(d) infinite
Ans:d
30. In CB Configuration of transistor, the output impedance is
(a) High
(b) medium
(c) Low
(d) none of these
Ans:a
31. In CB Configuration of transistor, voltage gain is
(a) High
(b) medium
(c) Low
(d) none of these
Ans:a
32. In CB Configuration of transistor, current gain is
(a) High
(b) medium
(c) Low
(d) almost one
Ans:d
33. In CE Configuration of transistor, the input impedance is
(a) High
(b) medium
(c) Low
(d) none of these
Ans:b
34. In CE Configuration of transistor, the output impedance is
(a) High
(b) medium
(c) Low
(d) none of these
Ans:b
35. In CC Configuration of transistor, the output impedance is
(a) High
(b) medium
(c) Low
(d) none of these
Ans:c
36. An ideal diode resistance has———resistance during forward biasing
(a) Zero
(b) Unity
(c) Maximum
(d) Minimum
Ans:a
37. Transistor is used as
(a) Switch
(b) Amplifier
(c) Both (a) & (b)
(d) None of these
Ans:c
38. Majority carriers of N type material
(a) Electrons
(b) Holes
(c) Protons
(d) None of these
Ans:a
39. Which one is semiconductor
(a) Copper
(b) Mica
(c) Carbon
(d) Silicon
Ans:d
40. Transistor is ———–Device
(a) Bipolar
(b) Unipolar
(c) Constant current
(d) Constant voltage
Ans:a
41. Diode is used as
(a) Regulator
(b) Inverter
(c) Current Regulator
(d) Rectifier
Ans:d
42. Zener diode acts as
(a) Rectifier
(b) Regulator
(c) Inverter
(d) None of these
Ans:b
43. Diode is ———–Device
(a) Bipolar
(b) Unipolar
(c) Constant current
(d) Constant voltage
Ans:b
44. Which one is intrinsic semiconductor
(a) Copper
(b) Mica
(c) Carbon
(d) Silicon
Ans:d
45. Which one is conductor
(a) Copper
(b) Mica
(c) Carbon
(d) Silicon
Ans:a
46. Which one is insulator
(a) Copper
(b) Mica
(c) Carbon
(d) Silicon
Ans:b
47. Ripple factor for half wave rectifier
(a) 1.11
(b) 1.21
(c) 1.5
(d) 0.48
Ans:b
48. Ripple factor for full wave rectifier
(a) 1.11
(b) 1.21
(c) 1.5
(d) 0.48
Ans:d
49. Ripple factor for bridge wave rectifier
(a) 1.11
(b) 1.21
(c) 1.5
(d) 0.48
Ans:d
50. BJT is ———–Device
(a) Bipolar
(b) Unipolar
(c) Constant current
(d) Constant voltage
Ans:a
51. SCR is
(a) un controlled device
(b) Regulator
(c) controlled device
(d) None of these
Ans:c
52. In CB Configuration of transistor, the input impedance is
(a) High
(b) medium
(c) Low
(d) none of these
Ans:c
53. Diac is
(a) Unidirectional device
(b) Bidirectional device
(c) Constant device
(d) None of these
Ans:b
54. Other name of SCR
(a) Transistor
(b) Diode
(c) Thyristor
(d) Resistor
Ans:c
55. UJT terminals are
(a) Base 1,Base 2,Emitter
(b) Base 1, collector,Emitter
(c) Base 1,Base 2,Collector
(d) None of these
Ans:a
56.A term intrinsic standoff ratio used in
(a) diode
(b) transistor
(c) UJT
(d) None of these
Ans:c
57.Which one works on negative resistance region
(a) diode
(b) transistor
(c) UJT
(d) None of these
Ans:c
58.SCR maybe considered as
(a) two diode model
(b) transistor model
(c) two transistor model
(d) None of these
Ans:c
59. Semiconductor is
- conductor
- insulator
- either conductor or insulator
- none of these
Ans:c
60. An example for conductor
- copper
- mica
- plastic
- carbon
Ans:a
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